LNF sets a new standard for low noise in microwave LNAs

After 10 000 hours in the cleanroom LNF has managed to significantly improve the cryogenic performance of the transistor used in its bestselling 4-8 GHz Low Noise Amplifier. By optimizing the transistor structure on literally nanometer scale, we have managed to reduce the noise temperature in the LNA from 2.3K to 1.5K. Further, the low DC-power performance of the LNA has improved significantly. With only 300µW of DC power supplied to the LNA it is capable of delivering 22dB of gain and a noise temperature of about 4K. This new LNA ships today. For more information check out the datasheet: